FeRAM Publications



“Investigation of Divalent Metal Substituted Bismuth Titanate Ferroelectric Thin Films”, Kan-Hao Xue, Carlos Paz De Araujo, Jolanta Celinska, and Christopher McWilliams, Integrated Ferroelectrics, 124, 26-32 (2011)


Divalent metals Ca, Sr, and Ba were employed to substitute for some of the A-site bismuth in Bi4Ti3O12 (BIT). The corresponding ferroelectric thin films (named CBiT, SBiT and BBiT) were derived by metal organic decomposition. Their remanent polarization (2Pr) values were 17.32 μC/cm2, 8.88 μC/cm2 and 21.34 μC/cm2. The smallest 2Pr value was found in SBiT, where its cation (Sr2+) radius is in the middle of the three. On the other hand, the smallest coercive field was discovered in BBiT. No fatigue improvement was discovered in BBiT compared with BIT, probably due to the lowered charge amount carried by Ba2+.