FeRAM Process Integration

Symetrix has developed key individual process technologies in the past several years which are suitable for stack cell high density non-volatile memory technology. These key process technologies include:

• Thin film ferroelectric process (scalability demonstrated to 250
   A film thickness)
• Reduced Thermal Budget (RTB) crystallization process that is
   stack compatible
• SBT MOCVD thin film deposition technology
• Bottom electrode stack development 
• Hydrogen barrier development 

In the past several years, the above-mentioned individual modules have been successfully combined to develop fully integrated SBT capacitors for FeRAM with stack cell architecture for 0.25um technology nodes and below.  See the publications for details on the above mentioned topics.