FeRAM is widely considered as the ideal non-volatile memory with highly desired performance features such as high write speeds, low power operation and high endurance (read-write cycles) and is comparable in cell size to other existing and emerging non-volatile memory technologies.
Out of the many ferroelectric materials available, there are mainly two classes of materials that are currently used for FeRAMs in commercial, industry, and radiation-hard applications.
Trinion Memory Architecture
Trinion Memory Architecture was developed in collaboration with IOTA Technologies, a memory design company based in San Jose, California. A revolutionary memory architecture, Trinion overcomes the limitations of conventional 1T/1C and 2T/2C memory architectures with the following performance features:
- Non-Destructive Read Out (NDRO) - enables high endurance requirements
- High Speed Access Times (~ 20 ns) - for read and write operation
- Ultra Low Power Consumption (0.22 mA/MHz)- in addition to the already low power operation of ferroelectric memories
- Bit Selectivity (Selective NDRO)
- High Array Efficiency (60-70%)
FeRAM Process Integration
Symetrix has developed key individual process technologies in the past several years which are suitable for stack cell high density non-volatile memory technology. These key process technologies include:
- Thin film ferroelectric process (scalability demonstrated to 250 A film thickness)
- Reduced Thermal Budget (RTB) crystallization process that is stack compatible
- SBT MOCVD thin film deposition technology
- Bottom electrode stack development
- Hydrogen barrier development
In the past several years, the above-mentioned individual modules have been successfully combined to develop fully integrated SBT capacitors for FeRAM with stack cell architecture for 0.25um technology nodes and below. See the publications for details on the above mentioned topics.